RB520S-30 B

RB520S-30 Schottky barrier Diodes SOD-523 + FEATURES z Small surface mounting type z Low IR. (IR = 0.1 uA) z High reliability - MARKING: B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current IO 200 mA IFSM 1 A Junction temperature Tj 125 ℃ Storage temperature Tstg -40-125 ℃ Peak forward surge current Electrical Ratings @TA=25℃ Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.6 V IF=200mA Reverse current IR 1 μA VR=10V １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ RB520S-30 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５